BT139-600E 原装NXP可控硅

symbol

parameter

conditions

min.

max.

unit

vdrm

repetitive peak off-state

voltages

-

-500

5001

-600

6001

-800

800

v

it(rms)itsm

rms on-state current non-repetitive peak

full sine wave; tmb £99 °c full sine wave; tj= 25 °c prior to

-

16

a

on-state current

surge

t = 20 ms

-

140

a

t = 16.7 ms

-

150

a

i2t

i2t for fusing

t = 10 ms

-

98

a2s

dit/dt

repetitive rate of rise of

itm= 20 a; ig= 0.2 a;

on-state current after

dig/dt = 0.2 a/ms

triggering

t2+ g+

-

50

a/ms

t2+ g-t2- g-

--

50 50

a/ms a/ms

t2- g+

-

10

a/ms

igm

peak gate current

-

2

a

vgm

peak gate voltage

-

5

v

pgm

peak gate power

-

5

w

pg(av)tstgtj

average gate power storage temperature operating junction

over any 20 ms period

--40 -

0.5 150 125

w °c °c

temperature